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| 30V N-Channel Power MOSFET General Description The AAT9060 30V N-Channel Power MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. AAT9060 Features * * * * PWMSwitchTM VDS(MAX) = 30V ID(MAX)1 = 39A @ TC = 25C IAPP(MAX) = 12.5A in typical computer application Low RDS(ON): * 16 m @VGS = 10V * 27 m @VGS = 4.5V Applications * * * DC-DC converters High current load switches LDO output DPAK Package Drain-Connected Tab Preliminary Information G S Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TC=25C unless otherwise noted) Value 30 20 39 31 60 20 41 26 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TC = 25C TC = 70C Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TC = 25C Maximum Power Dissipation 1 TC = 70C Operating Junction and Storage Temperature Range A W C Thermal Characteristics Symbol RJA RTYP RJC Description Maximum Junction-to-Ambient Typical Junction to ambient on PC board Maximum Junction-to-Case 2 Value 96 24 3 Units C/W C/W C/W 9060.2003.05.0.9 1 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions VGS=0V, ID=250A VGS=10V, ID=25A VGS=4.5V, ID=19A VGS=10V, VDS=5V (Pulsed) VGS=VDS, ID=250A VGS=20V, VDS=0V VGS=0V, VDS=30V VGS=0V, VDS=30V, TJ=70C VDS=5V, ID=9A AAT9060 Min 30 Typ Max Units V DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 3 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current 3 13 21 60 1.0 16 27 m A V nA A S 4 100 1 25 20 13 25 4 3.5 12 38 21 32 16 32 gfs Forward Transconductance 3 Dynamic Characteristics 4 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 Notes: VDS=15V, RD=1.3, VGS=5V VDS=15V, RD=1.3, VGS=10V VDS=15V, RD=1.3, VGS=10V VDS=15V, RD=1.3, VGS=10V VDD=15V, RD=1.3, VGS=10V, VDD=15V, RD=1.3, VGS=10V, VDD=15V, RD=1.3, VGS=10V, VDD=15V, RD=1.3, VGS=10V, 3 nC RG=6 RG=6 RG=6 RG=6 ns VGS=0, IS=20A 2 20 V A 1. Based on thermal dissipation from junction to case. RJC + RCA = RJA where the case thermal reference is defined as the solder mounting surface of the drain tab. RJC is guaranteed by design, however RCA is determined by the PCB design. Package current is limited to 30A DC and 60A pulsed. 2. Mounted on typical computer main board. 3. Pulse measurement 300 s. 4. Guaranteed by design. Not subject to production testing. 2 9060.2003.05.0.9 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 60 50 40 AAT9060 Transfer Characteristics 60 10V 6V 5V 4.5V 4V 3.5V 3V VD=VG -55C 25C 125C 50 40 IDS (A) ID (A) 30 20 10 0 0 0.5 1 1.5 2 2.5 3 30 20 10 0 0 1 2 3 4 5 6 VDS (V) V GS (V) On-Resistance vs. Drain Current 40 40 On-Resistance vs. Gate to Source Voltage ID = 25A 30 30 RDS(ON) (m) RDS(ON) (m) VGS = 4.5V 20 20 10 10 VGS = 10V 0 0 10 20 30 40 50 60 0 2 4 6 8 10 0 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0.6 -50 Threshold Voltage 0.4 0.2 0.0 -0.2 -0.4 -0.6 -0.8 Normalized RDS(ON) VGS(th) Variance (V) VGS = 10 V ID = 25A ID = 250A -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 9060.2003.05.0.9 3 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 10 AAT9060 Source-Drain Diode Forward Voltage 100 8 VD = 15V ID = 11.5A TJ = 150C 10 VGS (V) 6 4 IS (A) TJ = 25C 1 2 0.1 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1 1.2 0 Qg, Charge (nC) VSD (V) Capacitance 1800 1500 1200 900 600 300 0 0 10 20 30 40 CISS Capacitance (pF) CRSS COSS VDS (V) 4 9060.2003.05.0.9 30V N-Channel Power MOSFET Ordering Information Package TO-252 (DPAK) Marking 9060 Part Number (Tape and Reel) AAT9060INY-T1 AAT9060 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information TO-252 (DPAK) 6.54 0.19 5.205 0.255 9.855 0.555 5.775 0.445 1.46 0.57 7.5 7.5 2.285 0.105 0.83 0.19 2.67 REF 2.29 BSC 1.145 0.72 0.17 0.58 0.13 0.13 1.59 0.19 All dimensions in millimeters. 0.50 9060.2003.05.0.9 5 30V N-Channel Power MOSFET AAT9060 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 9060.2003.05.0.9 |
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